coseyfannitutti/discipline
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change fuse value

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change fuse value from 100mA to 500mA. 100mA is fine for this use, but 500mA is USB 2.0 standard
This commit is contained in:
coseyfannitutti 2019-08-15 15:53:14 -04:00
parent 6fe70eb17f
commit cd92d6a043
4 changed files with 10 additions and 10 deletions
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4
discipline-pcb.bak
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@ -2215,7 +2215,7 @@ L Device:R_Small R3
U 1 1 5D1C25EC
P 8550 7050
F 0 "R3" V 8450 7050 50 0000 C CNN
F 1 "68R" V 8550 7050 50 0000 C CNN
F 1 "75R" V 8550 7050 39 0000 C CNN
F 2 "Resistor_THT:R_Axial_DIN0204_L3.6mm_D1.6mm_P7.62mm_Horizontal" H 8550 7050 50 0001 C CNN
F 3 "~" H 8550 7050 50 0001 C CNN
1 8550 7050
@ -2226,7 +2226,7 @@ L Device:R_Small R4
U 1 1 5D1C27D1
P 8550 7150
F 0 "R4" V 8650 7150 50 0000 C CNN
F 1 "68R" V 8550 7150 50 0000 C CNN
F 1 "75R" V 8550 7150 39 0000 C CNN
F 2 "Resistor_THT:R_Axial_DIN0204_L3.6mm_D1.6mm_P7.62mm_Horizontal" H 8550 7150 50 0001 C CNN
F 3 "~" H 8550 7150 50 0001 C CNN
1 8550 7150

6
discipline-pcb.kicad_pcb
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@ -371,13 +371,13 @@
)
)
(module keyboard_parts:polyfuse_5.1mm (layer F.Cu) (tedit 5D1D896C) (tstamp 5D1AFB9E)
(module keyboard_parts:polyfuse_5.1mm (layer F.Cu) (tedit 5D55B730) (tstamp 5D1AFB9E)
(at 276.824148 57.148468 90)
(path /5D2F73B7)
(fp_text reference F1 (at 0.08749 0.034996 90) (layer F.Fab)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_text value 100mA (at 0 -1.905 90) (layer F.Fab)
(fp_text value 500mA (at 0 -1.905 90) (layer F.Fab)
(effects (font (size 1 1) (thickness 0.15)))
)
(fp_text user FUSE (at 0.02 0.03 90) (layer F.SilkS)
@ -8867,7 +8867,7 @@
(xy -5.108836 -0.98406)) (layer F.Cu) (width 0.01))
)
(gr_text 100mA (at 276.795589 61.679275) (layer F.SilkS)
(gr_text 500mA (at 276.795589 61.679275) (layer F.SilkS)
(effects (font (size 0.8 0.8) (thickness 0.1)))
)
(gr_text 7/2/2019 (at 335.646636 280.020494) (layer Cmts.User)

8
discipline-pcb.kicad_pcb-bak
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@ -8916,7 +8916,7 @@
(gr_text 1U (at 279.775522 169.273864) (layer F.SilkS) (tstamp 5D05670C)
(effects (font (size 1 1) (thickness 0.1)))
)
(gr_text 1U (at 258.777922 169.273864) (layer F.SilkS) (tstamp 5D05666E)
(gr_text 1U (at 260.36528 169.273864) (layer F.SilkS) (tstamp 5D05666E)
(effects (font (size 1 1) (thickness 0.1)))
)
(gr_line (start 362.129784 175.749849) (end 63.852975 175.749849) (layer Edge.Cuts) (width 0.15))
@ -11132,7 +11132,7 @@
(segment (start 264.116838 57.689807) (end 264.025821 57.59879) (width 0.25) (layer B.Cu) (net 113))
(segment (start 264.505733 57.689807) (end 264.116838 57.689807) (width 0.25) (layer B.Cu) (net 113))
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5D1B0E30) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5D50DB37) (hatch edge 0.508)
(connect_pads (clearance 0.508))
(min_thickness 0.254)
(fill yes (arc_segments 16) (thermal_gap 0.508) (thermal_bridge_width 0.508))
@ -11185,7 +11185,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5D1B0E2D) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer F.Cu) (tstamp 5D50DB34) (hatch edge 0.508)
(connect_pads (clearance 0.508))
(min_thickness 0.254)
(fill yes (arc_segments 16) (thermal_gap 0.508) (thermal_bridge_width 0.508))
@ -13558,7 +13558,7 @@
)
)
)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5D1B0E2A) (hatch edge 0.508)
(zone (net 1) (net_name GND) (layer B.Cu) (tstamp 5D50DB31) (hatch edge 0.508)
(connect_pads (clearance 0.508))
(min_thickness 0.254)
(fill yes (arc_segments 16) (thermal_gap 0.508) (thermal_bridge_width 0.508))

2
discipline-pcb.sch
View File

@ -2403,7 +2403,7 @@ L Device:Polyfuse_Small F1
U 1 1 5D2F73B7
P 7800 6300
F 0 "F1" H 7868 6346 50 0000 L CNN
F 1 "100mA" H 7868 6255 50 0000 L CNN
F 1 "500mA" H 7868 6255 50 0000 L CNN
F 2 "keyboard_parts:polyfuse_5.1mm" H 7850 6100 50 0001 L CNN
F 3 "~" H 7800 6300 50 0001 C CNN
1 7800 6300